View SA5211D602_7474112.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

sa5211 transimpedance ampli?er (180 mhz) rev. 03 07 october 1998 product speci?cation c c 1. description the sa5211 is a 28 k w transimpedance, wide-band, low noise ampli?er with differential outputs, particularly suitable for signal recovery in ?ber optic receivers. the part is ideally suited for many other rf applications as a general purpose gain block. 2. features n extremely low noise: 1.8 pa / ? hz n single 5 v supply n large bandwidth: 180 mhz n differential outputs n low input/output impedances n high power supply rejection ratio n 28 k w differential transresistance 3. applications n fiber optic receivers, analog and digital n current-to-voltage converters n wide-band gain block n medical and scienti?c instrumentation n sensor preampli?ers n single-ended to differential conversion n low noise rf ampli?ers n rf signal processing
philips semiconductors sa5211 transimpedance ampli?er (180 mhz) product speci?cation rev. 03 07 october 1998 2 of 28 9397 750 07427 ? philips electronics n.v. 2001. all rights reserved. 4. pinning information 4.1 pinning 5. ordering information 6. limiting values [1] maximum dissipation is determined by the operating ambient temperature and the thermal resistance: q ja = 125 c/w [2] the use of a pull-up resistor to v cc , for the pin diode is recommended. fig 1. pin con?guration. 1 2 3 4 5 6 78 14 13 12 11 10 9 gnd 2 gnd 2 nc i in nc v cc1 v cc2 gnd 1 gnd 1 gnd 1 gnd 1 gnd 2 out (C) out (+) d package top view sd00318 table 1: ordering information type number package name description version temperature range ( c) sa5211d so14 plastic small outline package; 14 leads; body width 3.9 mm sot108-1 - 40 to +85 table 2: limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v cc power supply - 6v t amb operating ambient temperature range -40 +85 c t j operating junction temperature range -55 +150 c t stg storage temperature range -65 +150 c p d max power dissipation, t a =25 c (still-air) [1] - 1.0 w i in max maximum input current [2] - 5ma q ja thermal resistance - 125 c/w
philips semiconductors sa5211 transimpedance ampli?er (180 mhz) product speci?cation rev. 03 07 october 1998 3 of 28 9397 750 07427 ? philips electronics n.v. 2001. all rights reserved. 7. static characteristics [1] test condition: output quiescent voltage variation is less than 100 mv for 3 ma load current. 8. dynamic characteristics table 3: recommended operating conditions symbol parameter conditions min max unit v cc supply voltage 4.5 5.5 v t amb ambient temperature range -40 +85 c t j junction temperature range -40 +105 c table 4: dc electrical characteristics min and max limits apply over operating temperature range at v cc = 5 v, unless otherwise speci?ed. typical data apply at v cc = 5 v and t amb =25 c. symbol parameter test conditions min typ max unit v in input bias voltage 0.55 0.8 1.00 v v o output bias voltage 2.7 3.4 3.7 v v os output offset voltage - 0 130 mv i cc supply current 20 26 31 ma i omax output sink/source current [1] 34 - ma i in input current (2% linearity) test circuit 8, procedure 2 20 40 -m a i in max maximum input current overload threshold test circuit 8, procedure 4 30 60 -m a table 5: ac electrical characteristics typical data and min and max limits apply at v cc = 5 v and t amb =25 c symbol parameter test conditions min typ max unit r t transresistance (differential output) dc tested rl = test circuit 8, procedure 1 21 28 36 k w r o output resistance (differential output) dc tested - 30 -w r t transresistance (single-ended output) dc tested rl = 10.5 14 18.0 k w r o output resistance (single-ended output) dc tested - 15 -w f 3db bandwidth (-3db) t a = 25 c test circuit 1 - 180 - mhz r in input resistance - 200 -w c in input capacitance - 4 - pf d r/ d v transresistance power supply sensitivity v cc = 5 0.5 v - 3.7 - %/v d r/ d t transresistance ambient temperature sensitivity d t amb = t amb max -t amb min - 0.025 - %/ c i n rms noise current spectral density (referred to input) test circuit 2 f = 10 mhz ta = 25 c - 1.8 - pa/ ? hz i t integrated rms noise current over the bandwidth (referred to input) ta = 25 c test circuit 2 ----
philips semiconductors sa5211 transimpedance ampli?er (180 mhz) product speci?cation rev. 03 07 october 1998 4 of 28 9397 750 07427 ? philips electronics n.v. 2001. all rights reserved. [1] package parasitic capacitance amounts to about 0.2pf [2] psrr is output referenced and is circuit board layout dependent at higher frequencies. for best performance use rf ?lter in v cc lines. [3] guaranteed by linearity and overload tests. [4] t r de?ned as 20 to 80% rise time. it is guaranteed by -3db bandwidth test. i n c s =0 [1] d f = 50 mhz d f = 100 mhz d f = 200 mhz - - - 13 20 35 - - - na i n c s = 1pf d f = 50 mhz d f = 100 mhz d f = 200 mhz - - - 13 21 41 - - - na psrr power supply rejection ratio [2] (v cc1 = v cc2 ) dc tested, d v cc = 0.1v equivalent ac test circuit 3 23 32 - db psrr power supply rejection ratio [2] (v cc1 ) dc tested, d v cc = 0.1v equivalent ac test circuit 4 23 32 - db psrr power supply rejection ratio [2] (v cc2 ) dc tested, d v cc = 0.1v equivalent ac test circuit 5 45 65 - db psrr power supply rejection ratio (ecl con?guration) [2] f = 0.1 mhz test circuit 6 - 23 - db v omax maximum differential output voltage swing rl = test circuit 8, procedure 3 1.7 3.2 - v p-p v in max maximum input amplitude for output duty cycle of 50 5% [3] test circuit 7 160 -- mv p-p t r rise time for 50mv output signal [4] test circuit 7 - 0.8 1.8 ns table 5: ac electrical characteristics continued typical data and min and max limits apply at v cc = 5 v and t amb =25 c symbol parameter test conditions min typ max unit
philips semiconductors sa5211 transimpedance ampli?er (180 mhz) product speci?cation rev. 03 07 october 1998 5 of 28 9397 750 07427 ? philips electronics n.v. 2001. all rights reserved. 9. test circuits fig 2. test circuits 1 and 2. test circuit 2 test circuit 1 single-ended differential network analyzer s-parameter test set port 1 port 2 5v 33 in dut out out 50 33 gnd 1 gnd 2 v cc1 v cc2 z o = 50 0.1 m f r l = 50 r = 1k 0.1 m f 0.1 m f spectrum analyzer 5v 33 in dut out out 33 gnd 1 gnd 2 v cc1 v cc2 0.1 m f r l = 50 0.1 m f a v = 60db nc z o = 50 z o = 50 sd00319 r t ? v out v in r = 2 s21 rr t = v out v in r = 4 s21 r r o ? z o 1 + s22 1 C s22 C 33 r o = 2z o 1 + s22 1 C s22 C 66
philips semiconductors sa5211 transimpedance ampli?er (180 mhz) product speci?cation rev. 03 07 october 1998 6 of 28 9397 750 07427 ? philips electronics n.v. 2001. all rights reserved. fig 3. test circuits 3 and 4. test circuit 4 test circuit 3 network analyzer s-parameter test set port 1 port 2 v cc2 v cc1 gnd 1 gnd 2 in current probe 1mv/ma cal test transformer nh0300hb 100 33 33 16 5v out out bal. 0.1 m f 0.1 m f 10 m f 0.1 m f 0.1 m f 50 unbal. network analyzer s-parameter test set port 1 port 2 current probe 1mv/ma cal test transformer nh0300hb 100 33 33 16 5v out out bal. 50 unbal. v cc1 v cc2 in 0.1 m f 0.1 m f 10 m f 0.1 m f 0.1 m f 0.1 m f 10 m f 5v 10 m f 10 m f gnd 1 gnd 2 sd00320
philips semiconductors sa5211 transimpedance ampli?er (180 mhz) product speci?cation rev. 03 07 october 1998 7 of 28 9397 750 07427 ? philips electronics n.v. 2001. all rights reserved. fig 4. test circuits 5 and 6. network analyzer s-parameter test set port 1 port 2 current probe 1mv/ma cal test transformer nh0300hb 100 33 33 16 5v out out bal. 50 unbal. v cc2 v cc1 in 0.1 m f 0.1 m f 10 m f 0.1 m f 0.1 m f 0.1 m f 10 m f 5v test circuit 6 test circuit 5 network analyzer s-parameter test set port 1 port 2 current probe 1mv/ma cal test transformer nh0300hb 100 33 33 16 out out bal. 50 unbal. gnd 2 gnd 1 v cc1 v cc2 in 0.1 m f 0.1 m f 0.1 m f 10 m f gnd 0.1 m f 10 m f 5.2v 10 m f gnd 2 gnd 1 sd00321
philips semiconductors sa5211 transimpedance ampli?er (180 mhz) product speci?cation rev. 03 07 october 1998 8 of 28 9397 750 07427 ? philips electronics n.v. 2001. all rights reserved. fig 5. test circuit 7. test circuit 7 oscilloscope 33 33 1k out out gnd 2 gnd 1 v cc1 v cc2 in 0.1 m f 0.1 m f pulse gen. measurement done using differential wave forms 0.1 m f 50 z o = 50 w a b z o = 50 w dut sd00322
philips semiconductors sa5211 transimpedance ampli?er (180 mhz) product speci?cation rev. 03 07 october 1998 9 of 28 9397 750 07427 ? philips electronics n.v. 2001. all rights reserved. fig 6. test circuit 8. gnd 2 test circuit 8 out + out C gnd 1 in dut i in ( m a) 5v v out (v) + C typical differential output voltage vs current input 2.00 1.60 1.20 0.80 0.40 0.00 C0.40 C0.80 C1.20 C1.60 C2.00 C100 C80 C60 C40 C20 0 20 40 60 80 100 differential output voltage (v) current input ( m a) ne5211 test conditions procedure 1 r t measured at 15 m a r t = (v o1 C v o2 )/(+15 m a C (C15 m a)) where: v o1 measured at i in = +15 m a v o2 measured at i in = C15 m a procedure 2 linearity = 1 C abs((v oa C v ob ) / (v o3 C v o4 )) where: v o3 measured at i in = +30 m a v o4 measured at i in = C30 m a procedure 3 v omax = v o7 C v o8 where: v o7 measured at i in = +65 m a v o8 measured at i in = C65 m a procedure 4 i in test pass conditions: v o7 C v o5 > 20mv and v 06 C v o5 > 50mv where: v o5 measured at i in = +40 m a v o6 measured at i in = C400 m a v o7 measured at i in = +65 m a v o8 measured at i in = C65 m a sd00331 v ob = r t (C 30 m a) + v ob v oa = r t (+ 30 m a) + v ob
philips semiconductors sa5211 transimpedance ampli?er (180 mhz) product speci?cation rev. 03 07 october 1998 10 of 28 9397 750 07427 ? philips electronics n.v. 2001. all rights reserved. 10. typical performance characteristics fig 7. typical performance characteristics. differential output voltage (v) differential output voltage (v) output voltage (v) output bias voltage (v) ne5211 supply current vs temperature ne5211 output bias voltage vs temperature ne5211 output voltage vs input current ne5211 input bias voltage vs temperature ne5211 output bias voltage vs temperature ne5211 differential output voltage vs input current ne5211 output offset voltage vs temperature ne5211 differential output swing vs temperature ne5211 output voltage vs input current ambient temperature ( c) ?60 ?20 0 20 40 60 80 100 120 30 ?40 total supply current (ma) (i + i ) cc1 cc2 3.50 3.45 3.40 3.35 3.30 3.25 output bias voltage (v) v cc = 5.0v pin 14 pin 12 950 input bias voltage (mv) 5.5v 4.5v 40 output offset voltage (mv) 5.5v 5.0v 4.5v v os =v out12 ?v out14 4.1 3.9 3.7 3.5 3.3 3.1 2.9 2.7 pin 14 5.5v 5.0v 4.5v differential output swing (v) 4.0 3.8 3.6 3.4 3.2 3.0 2.8 2.6 5.5v 5.0v 4.5v 2.4 2.2 dc tested r l = 4.5 2.5 ?100.0 0 +100.0 input current ( m a) +25 c +125 c +85 c ?55 c +125 c +85 c 2.0 0 ?2.0 ?100.0 0 +100.0 input current ( m a) 5.5v 5.0v 4.5v 5.5v 5.0v 4.5v 2.0 0 ?2.0 ?100.0 0 +100.0 input current ( m a) +125 c +85 c +25 c ?55 c 140 28 26 24 22 20 18 5.5v 4.5v 5.0v ?60 ?20 0 20 40 60 80 100 120 ?40 140 ambient temperature ( c) ?60 ?20 0 20 40 60 80 100 120 ?40 140 ambient temperature ( c) 900 850 800 750 700 650 ?60 ?20 0 20 40 60 80 100 120 ?40 140 ambient temperature ( c) ?60 ?20 0 20 40 60 80 100 120 ?40 140 ambient temperature ( c) 20 0 ?20 ?40 ?60 ?80 ?100 ?120 ?140 ?60 ?20 0 20 40 60 80 100 120 ?40 140 ambient temperature ( c) +25 c ?55 c ?55 c +25 c +85 c ?55 c +25 c +125 c +85 c sd00332 +125 c
philips semiconductors sa5211 transimpedance ampli?er (180 mhz) product speci?cation rev. 03 07 october 1998 11 of 28 9397 750 07427 ? philips electronics n.v. 2001. all rights reserved. fig 8. typical performance characteristics. (cont.) population (%) ne5211 differential transresistance vs temperature ne5211 gain vs frequency ne5211 bandwidth vs temperature ne5211 typical bandwidth distribution (70 parts from 3 wafer lots) ne5211 gain and phase shift vs frequency 60 50 40 30 20 10 143 155 167 179 191 203 frequency (mhz) pin 12 single-ended r l =50 w v cc = 5.0v t a =25 c 0 17 0.1 1 10 100 frequency (mhz) gain (db) pin 12 r l =50 w t a =25 c 16 15 14 13 12 11 10 9 8 17 0.1 1 10 100 frequency (mhz) gain (db) 16 15 14 13 12 11 10 9 8 pin 14 r l =50 w t a =25 c 17 0.1 1 10 100 frequency (mhz) gain (db) 16 15 14 13 12 11 10 9 8 pin 12 v cc =5v 17 0.1 1 10 100 frequency (mhz) gain (db) 16 15 14 13 12 11 10 9 8 pin 14 v cc =5v 17 0.1 1 10 100 frequency (mhz) gain (db) 16 15 14 13 12 11 10 9 8 33 ?60 ?40 ?20 0 20 40 100 60 120 80 differential transresistance (k ) 140 ambient temperature ( c) dc tested r l = w 32 31 30 29 28 27 220 ?60 ?40 ?20 0 20 40 100 60 120 80 bandwidth (mhz) 140 ambient temperature ( c) 200 180 160 140 120 100 pin 12 single-ended r l =50 w 120 60 0 ?60 ?120 phase ( ) o pin 12 v cc =5v t a =25 c 17 0.1 1 10 100 frequency (mhz) gain (db) 16 15 14 13 12 11 10 9 8 120 phase () o 270 5.5v 4.5v 5.0v 5.5v 4.5v 5.0v 5.5v 4.5v 5.0v pin 14 v cc =5v t a =25 c 5.5v 4.5v 5.0v ?55 c 125 c 85 c 25 c ?55 c 125 c 85 c 25 c ne5211 gain vs frequency ne5211 gain vs frequency ne5211 gain vs frequency ne5211 gain and phase shift vs frequency sd00333
philips semiconductors sa5211 transimpedance ampli?er (180 mhz) product speci?cation rev. 03 07 october 1998 12 of 28 9397 750 07427 ? philips electronics n.v. 2001. all rights reserved. fig 9. typical performance characteristics. (cont.) ne5211 output resistance vs temperature ne5211 output resistance vs temperature ne5211 output resistance vs temperature ne5211 output resistance vs frequency ne5211 power supply rejection ratio vs temperature ne5211 group delay vs frequency ne5211 output resistance vs frequency ne5211 output resistance vs frequency 18 ?60 ?40 ?20 0 20 40 100 60 120 80 output resistance ( ) 140 ambient temperature ( c) 10 0.1 17 16 15 14 13 pin 14 pin 12 dc tested v cc = 5.0v w 18 ?60 ?40 ?20 0 20 40 100 60 120 80 output resistance ( ) 140 17 16 15 14 13 dc tested w ambient temperature ( c) pin 12 4.5v 5.0v 5.5v 19 ?60 ?40 ?20 0 20 40 100 60 120 80 output resistance ( ) 140 18 17 16 15 14 dc tested w pin 14 4.5v 5.0v 5.5v ambient temperature ( c) 40 ?60 ?40 ?20 0 20 40 100 60 120 80 power supply rejection ratio (db) 140 dc tested v cc1 =v cc2 = 5.0v ambient temperature ( c) 38 36 34 32 30 28 output referred d v cc = 0.1v 20 40 60 80 100 120 140 160 180 200 6 4 2 0 8 delay (ns) frequency (mhz) 40 35 30 25 20 15 10 5 0 0.1 1 10 100 output resistance ( ) w frequency (mhz) 0.1 1 10 100 frequency (mhz) 80 output resistance ( ) w 70 60 50 40 30 20 10 0 v cc = 5.0v 0.1 1 10 100 80 output resistance ( ) w 70 60 50 40 30 20 10 0 frequency (mhz) +125 c +85 c +25 c ?55 c pin 12 pin 14 v cc = 5.0v pin 12 t a =25 c 4.5v 5.0v 5.5v sd00335
philips semiconductors sa5211 transimpedance ampli?er (180 mhz) product speci?cation rev. 03 07 october 1998 13 of 28 9397 750 07427 ? philips electronics n.v. 2001. all rights reserved. 11. theory of operation transimpedance ampli?ers have been widely used as the preampli?er in ?ber-optic receivers. the sa5211 is a wide bandwidth (typically 180 mhz) transimpedance ampli?er designed primarily for input currents requiring a large dynamic range, such as those produced by a laser diode. the maximum input current before output stage clipping occurs at typically 50 m a. the sa5211 is a bipolar transimpedance ampli?er which is current driven at the input and generates a differential voltage signal at the outputs. the forward transfer function is therefore a ratio of the differential output voltage to a given input current with the dimensions of ohms. the main feature of this ampli?er is a wideband, low-noise input stage which is desensitized to photodiode capacitance variations. when connected to a photodiode of a few picofarads, the frequency response will not be degraded signi?cantly. except for the input stage, the entire signal path is differential to provide improved power-supply rejection and ease of interface to ecl type circuitry. a block diagram of the circuit is shown in figure 11 . the input stage (a1) employs shunt-series feedback to stabilize the current gain of the ampli?er. the transresistance of the ampli?er from the current source to the emitter of q 3 is approximately the value of the feedback resistor, r f = 14.4 k w . the gain from the second stage (a2) and emitter followers (a3 and a4) is about two. therefore, the differential transresistance of the entire ampli?er, r t is (1) the single-ended transresistance of the ampli?er is typically 14.4 k w . the simpli?ed schematic in figure 12 shows how an input current is converted to a differential output voltage. the ampli?er has a single input for current which is referenced to ground 1. an input current from a laser diode, for example, will be converted into a voltage by the feedback resistor r f . the transistor q1 provides most of the open loop gain of the circuit, a vol ? 70. the emitter follower q 2 minimizes loading on q 1 . the transistor q 4 , resistor r 7 , and v b1 provide level shifting and interface with the q 15 C q 16 differential pair of the second stage which is biased with an internal reference, v b2 . the differential outputs are derived from emitter followers fig 10. typical performance characteristics. (cont.) 0 2 4 6 8 10 12 14 16 18 20 (ns) v cc =5v t a =25 c 20mv/div output step response r t v out diff () i in ----------------------------- 2 r f 2 14.4 k () 28.8 k w ====
philips semiconductors sa5211 transimpedance ampli?er (180 mhz) product speci?cation rev. 03 07 october 1998 14 of 28 9397 750 07427 ? philips electronics n.v. 2001. all rights reserved. q 11 C q 12 which are biased by constant current sources. the collectors of q 11 C q 12 are bonded to an external pin, v cc2 , in order to reduce the feedback to the input stage. the output impedance is about 17 w single-ended. for ease of performance evaluation, a 33 w resistor is used in series with each output to match to a 50 w test system. 12. bandwidth calculations the input stage, shown in figure 13 , employs shunt-series feedback to stabilize the current gain of the ampli?er. a simpli?ed analysis can determine the performance of the ampli?er. the equivalent input capacitance, c in , in parallel with the source, i s , is approximately 4 pf (typical), assuming that c s = 0 where c s is the external source capacitance. since the input is driven by a current source the input must have a low input resistance. the input resistance, r in , is the ratio of the incremental input voltage, v in , to the corresponding input current, i in and can be calculated as: (2) thus c in and r in will form the dominant pole of the entire ampli?er; (3) assuming typical values for r f = 14.4 k w , r in = 200 w , c in = 4 pf (4) the operating point of q1, figure 12 , has been optimized for the lowest current noise without introducing a second dominant pole in the pass-band. all poles associated with subsequent stages have been kept at suf?ciently high enough frequencies to yield an overall single pole response. although wider bandwidths have been achieved by using a cascade input stage con?guration, the present solution has the advantage of a very uniform, highly desensitized frequency response because the miller effect dominates over the external photodiode and stray capacitances. for example, assuming a source capacitance of 1 pf, input stage voltage gain of 70, r in = 60 w then the total input capacitance, c in = (1 + 4) pf which will lead to only a 20% bandwidth reduction. 13. noise most of the currently installed ?ber-optic systems use non-coherent transmission and detect incident optical power. therefore, receiver noise performance becomes very important. the input stage achieves a low input referred noise current (spectral density) of 1.8 pa/ ? hz (typical). the transresistance con?guration assures that the external high value bias resistors often required for photodiode biasing will not contribute to the total noise system noise. the equivalent input rms noise current is r in v in i in --------- r f 1a vol + ----------------------- 14.4 k w 71 ------------------- - 203 w == = = f 3 db C 1 2 p r in c in ------------------------- - = f 3 db C 1 2 p 4 pf 200 w -------------------------------------- - 200 mhz = =
philips semiconductors sa5211 transimpedance ampli?er (180 mhz) product speci?cation rev. 03 07 october 1998 15 of 28 9397 750 07427 ? philips electronics n.v. 2001. all rights reserved. strongly determined by the quiescent current of q 1 , the feedback resistor r f , and the bandwidth; however, it is not dependent upon the internal miller-capacitance. the measured wideband noise was 41 na rms in a 200 mhz bandwidth. 14. dynamic range calculations the electrical dynamic range can be de?ned as the ratio of maximum input current to the peak noise current: electrical dynamic range, d e , in a 200 mhz bandwidth assuming i inmax = 60 m a and a wideband noise of i eq =41na rms for an external source capacitance of c s = 1 pf. (5) (6) (7) in order to calculate the optical dynamic range the incident optical power must be considered. for a given wavelength l ; energy of one photon = watt sec (joule) where h = plancks constant = 6.6 10 -34 joule sec. c = speed of light = 3 10 8 m/sec c / l = optical frequency no. of incident photons/sec = where p = optical incident power no. of generated electrons/sec = where h = quantum ef?ciency d e (max. input current) (peak noise current) ------------------------------------------------ = d e (db) 20 log 60 10 6 C () 2 41 10 9 C () ---------------------------- - = d e db () 20 log 60 m a () 58 na () -------------------- 60 db = = hc l ----- - p hc ----- - l ----- - h p hc ----- - l ----- - no. of generated electron hole pairs no. of incident photons ------------------------------------------------------------------------------------ =
philips semiconductors sa5211 transimpedance ampli?er (180 mhz) product speci?cation rev. 03 07 october 1998 16 of 28 9397 750 07427 ? philips electronics n.v. 2001. all rights reserved. where e = electron charge = 1.6 10 -19 coulombs responsivity r = amp/watt assuming a data rate of 400 mbaud (bandwidth, b = 200 mhz), the noise parameter z n may be calculated as: 1 (8) where z is the ratio of rms noise output to the peak response to a single hole-electron pair. assuming 100% photodetector quantum ef?ciency, half mark/half space digital transmission, 850nm lightwave and using gaussian approximation, the minimum required optical power to achieve 10 -9 ber is: (9) where h is plancks constant, c is the speed of light, l is the wavelength. the minimum input current to the sa5211, at this input power is: (10) choosing the maximum peak overload current of i avmax =60 m a, the maximum mean optical power is: (11) thus the optical dynamic range, d o is: (12) 1. s.d. personick, optical fiber transmission systems, plenum press, ny, 1981, chapter 3. i \h p hc ----- l ----- e amps (coulombs/sec.) = h e hc ------------ - l ------------- i pr = z i eq qb ------- - 41 10 9 C 1.6 10 19 C () 200 10 6 () ------------------------------------------------------------ 1281 == = p avmin 12 hc l ----- bz 12 2.3 10 19 C == 200 10 6 1281 () 719 nw 31.5 dbm C 1139 nw 29.4 dbm C == = = i avmin qp avmin l hc ----- 1 joule ------------ joule sec ------------ q = l = 707 10 9 C 1.6 10 19 C 2.3 10 19 C ---------------------------------------------------------- - 500 na = = p avmax hcl avmax l q --------------------- - 2.3 10 19 C 1.6 10 19 C -------------------------- 60 10 m a 86 m w or 10.6 dbm (optical) C = == d o p avmax p avmin C 4.6 C 29.4 C () 24.8 db = C = = d o p avmax p avmin C 31.5 C 10.6 C () C = =
philips semiconductors sa5211 transimpedance ampli?er (180 mhz) product speci?cation rev. 03 07 october 1998 17 of 28 9397 750 07427 ? philips electronics n.v. 2001. all rights reserved. this represents the maximum limit attainable with the sa5211 operating at 200 mhz bandwidth, with a half mark/half space digital transmission at 850nm wavelength. fig 11. sa5211 C block diagram. input output + output C a1 a2 a3 a4 r f sd00327 fig 12. transimpedance ampli?er. input outC out+ photodiode vb2 + + r 1 r 3 r 12 r 13 r 5 r 4 r 7 r 14 r 15 q 1 q 3 q 2 q 4 q 15 q 16 q 11 q 12 gnd 2 gnd 1 v cc2 v cc1 r 2 sd00328 fig 13. shunt-series input stage. v cc v eq3 v in i in input i f i b q1 q2 q3 r2 r3 r4 r f r1 i c1 sd00329
philips semiconductors sa5211 transimpedance ampli?er (180 mhz) product speci?cation rev. 03 07 october 1998 18 of 28 9397 750 07427 ? philips electronics n.v. 2001. all rights reserved. 15. application information package parasitics, particularly ground lead inductances and parasitic capacitances, can signi?cantly degrade the frequency response. since the sa5211 has differential outputs which can feed back signals to the input by parasitic package or board layout capacitances, both peaking and attenuating type frequency response shaping is possible. constructing the board layout so that ground 1 and ground 2 have very low impedance paths has produced the best results. this was accomplished by adding a ground-plane stripe underneath the device connecting ground 1, pins 8-11, and ground 2, pins 1 and 2 on opposite ends of the so14 package. this ground-plane stripe also provides isolation between the output return currents ?owing to either v cc2 or ground 2 and the input photodiode currents to ?owing to ground 1. without this ground-plane stripe and with large lead inductances on the board, the part may be unstable and oscillate near 800 mhz. the easiest way to realize that the part is not functioning normally is to measure the dc voltages at the outputs. if they are not close to their quiescent values of 3.3 v (for a 5 v supply), then the circuit may be oscillating. input pin layout necessitates that the photodiode be physically very close to the input and ground 1. connecting pins 3 and 5 to ground 1 will tend to shield the input but it will also tend to increase the capacitance on the input and slightly reduce the bandwidth. as with any high-frequency device, some precautions must be observed in order to enjoy reliable performance. the ?rst of these is the use of a well-regulated power supply. the supply must be capable of providing varying amounts of current without signi?cantly changing the voltage level. proper supply bypassing requires that a good quality 0.1 m f high-frequency capacitor be inserted between v cc1 and v cc2 , preferably a chip capacitor, as close to the package pins as possible. also, the parallel combination of 0.1 m f capacitors with 10 m f tantalum capacitors from each supply, v cc1 and v cc2 , to the ground plane should provide adequate decoupling. some applications may require an rf choke in series with the power supply line. separate analog and digital ground leads must be maintained and printed circuit board ground plane should be employed whenever possible. figure 14 depicts a 50 mb/s ttl ?ber-optic receiver using the bpf31, 850 nm led, the sa5211 and the sa5214 post ampli?er.
philips semiconductors sa5211 transimpedance ampli?er (180 mhz) product speci?cation rev. 03 07 october 1998 19 of 28 9397 750 07427 ? philips electronics n.v. 2001. all rights reserved. the ne5210/ne5217 combination can operate at data rates in excess of 100 mb/s nrz the capacitor c7 decreases the ne5210 bandwidth to improve overall s/n ratio in the dc-50 mhz band, but does create extra high frequency noise on the ne5210 v cc pin(s). fig 14. a 50mb/s ?ber optic receiver. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 1 2 3 4 5 6 7 8 9 10 11 12 13 14 led c pkdet thresh gnd a flag jam v ccd v cca gnd d ttl out in 1b in 1a c azp c azn out 1b in 8b out 1a in 8a r hyst r pkdet ne5214 gnd gnd gnd out gnd gnd out v cc v cc nc i in nc gnd gnd ne5210 r2 220 d1 led c9 100pf 100pf c7 .01 m f 47 m f c1 c2 gnd +v cc 0.1 m f r4 4k r3 47k v out (ttl) l3 10 m h l2 10 m h c11 c10 .01 m f .01 m f c13 c12 10 m f 10 m f c8 l1 10 m h bpf31 optical input r1 100 c5 1.0 m f c6 .01 m f .01 m f c4 10 m f c3 sd00330
philips semiconductors sa5211 transimpedance ampli?er (180 mhz) product speci?cation rev. 03 07 october 1998 20 of 28 9397 750 07427 ? philips electronics n.v. 2001. all rights reserved. 15.1 die sales disclaimer due to the limitations in testing high frequency and other parameters at the die level, and the fact that die electrical characteristics may shift after packaging, die electrical parameters are not speci?ed and die are not guaranteed to meet electrical characteristics (including temperature range) as noted in this data sheet which is intended only to specify electrical characteristics for a packaged device. all die are 100% functional with various parametrics tested at the wafer level, at room temperature only (25 c), and are guaranteed to be 100% functional as a result of electrical testing to the point of wafer sawing only. although the most modern fig 15. sa5211 bonding diagram. gnd 2 gnd 2 nc input nc gnd 1 gnd 1 gnd 1 gnd 1 out (+) gnd 2 out (?) 1 2 3 4 5 6 78 9 10 11 12 13 14 vcc1 vcc 2 sd00488 ecn no.: 06027 1992 mar 13
philips semiconductors sa5211 transimpedance ampli?er (180 mhz) product speci?cation rev. 03 07 october 1998 21 of 28 9397 750 07427 ? philips electronics n.v. 2001. all rights reserved. processes are utilized for wafer sawing and die pick and place into waf?e pack carriers, it is impossible to guarantee 100% functionality through this process. there is no post waf?e pack testing performed on individual die. since philips semiconductors has no control of third party procedures in the handling or packaging of die, philips semiconductors assumes no liability for device functionality or performance of the die or systems on any die sales. although philips semiconductors typically realizes a yield of 85% after assembling die into their respective packages, with care customers should achieve a similar yield. however, for the reasons stated above, philips semiconductors cannot guarantee this or any other yield on any die sales.
philips semiconductors sa5211 transimpedance ampli?er (180 mhz) product speci?cation rev. 03 07 october 1998 22 of 28 9397 750 07427 ? philips electronics n.v. 2001. all rights reserved. 16. package outline fig 16. sot108-1. unit a max. a 1 a 2 a 3 b p cd (1) e (1) (1) eh e ll p qz y w v q references outline version european projection issue date iec jedec eiaj mm inches 1.75 0.25 0.10 1.45 1.25 0.25 0.49 0.36 0.25 0.19 8.75 8.55 4.0 3.8 1.27 6.2 5.8 0.7 0.6 0.7 0.3 8 0 o o 0.25 0.1 dimensions (inch dimensions are derived from the original mm dimensions) note 1. plastic or metal protrusions of 0.15 mm maximum per side are not included. 1.0 0.4 sot108-1 x w m q a a 1 a 2 b p d h e l p q detail x e z e c l v m a (a ) 3 a 7 8 1 14 y 076e06 ms-012 pin 1 index 0.069 0.010 0.004 0.057 0.049 0.01 0.019 0.014 0.0100 0.0075 0.35 0.34 0.16 0.15 0.050 1.05 0.041 0.244 0.228 0.028 0.024 0.028 0.012 0.01 0.25 0.01 0.004 0.039 0.016 97-05-22 99-12-27 0 2.5 5 mm scale so14: plastic small outline package; 14 leads; body width 3.9 mm sot108-1
philips semiconductors sa5211 transimpedance ampli?er (180 mhz) product speci?cation rev. 03 07 october 1998 23 of 28 9397 750 07427 ? philips electronics n.v. 2001. all rights reserved. 17. soldering 17.1 introduction to soldering surface mount packages this text gives a very brief insight to a complex technology. a more in-depth account of soldering ics can be found in our data handbook ic26; integrated circuit packages (document order number 9398 652 90011). there is no soldering method that is ideal for all surface mount ic packages. wave soldering can still be used for certain surface mount ics, but it is not suitable for ?ne pitch smds. in these situations re?ow soldering is recommended. 17.2 re?ow soldering re?ow soldering requires solder paste (a suspension of ?ne solder particles, ?ux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. several methods exist for re?owing; for example, convection or convection/infrared heating in a conveyor type oven. throughput times (preheating, soldering and cooling) vary between 100 and 200 seconds depending on heating method. typical re?ow peak temperatures range from 215 to 250 c. the top-surface temperature of the packages should preferable be kept below 220 c for thick/large packages, and below 235 c small/thin packages. 17.3 wave soldering conventional single wave soldering is not recommended for surface mount devices (smds) or printed-circuit boards with a high component density, as solder bridging and non-wetting can present major problems. to overcome these problems the double-wave soldering method was speci?cally developed. if wave soldering is used the following conditions must be observed for optimal results: ? use a double-wave soldering method comprising a turbulent wave with high upward pressure followed by a smooth laminar wave. ? for packages with leads on two sides and a pitch (e): C larger than or equal to 1.27 mm, the footprint longitudinal axis is preferred to be parallel to the transport direction of the printed-circuit board; C smaller than 1.27 mm, the footprint longitudinal axis must be parallel to the transport direction of the printed-circuit board. the footprint must incorporate solder thieves at the downstream end. ? for packages with leads on four sides, the footprint must be placed at a 45 angle to the transport direction of the printed-circuit board. the footprint must incorporate solder thieves downstream and at the side corners.
philips semiconductors sa5211 transimpedance ampli?er (180 mhz) product speci?cation rev. 03 07 october 1998 24 of 28 9397 750 07427 ? philips electronics n.v. 2001. all rights reserved. during placement and before soldering, the package must be ?xed with a droplet of adhesive. the adhesive can be applied by screen printing, pin transfer or syringe dispensing. the package can be soldered after the adhesive is cured. typical dwell time is 4 seconds at 250 c. a mildly-activated ?ux will eliminate the need for removal of corrosive residues in most applications. 17.4 manual soldering fix the component by ?rst soldering two diagonally-opposite end leads. use a low voltage (24 v or less) soldering iron applied to the ?at part of the lead. contact time must be limited to 10 seconds at up to 300 c. when using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 c. 17.5 package related soldering information [1] all surface mount (smd) packages are moisture sensitive. depending upon the moisture content, the maximum temperature (with respect to time) and body size of the package, there is a risk that internal or external package cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). for details, refer to the drypack information in the data handbook ic26; integrated circuit packages; section: packing methods . [2] these packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink (at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version). [3] if wave soldering is considered, then the package must be placed at a 45 angle to the solder wave direction. the package footprint must incorporate solder thieves downstream and at the side corners. [4] wave soldering is only suitable for lqfp, qfp and tqfp packages with a pitch (e) equal to or larger than 0.8 mm; it is de?nitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm. [5] wave soldering is only suitable for ssop and tssop packages with a pitch (e) equal to or larger than 0.65 mm; it is de?nitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm. table 6: suitability of surface mount ic packages for wave and re?ow soldering methods package soldering method wave re?ow [1] bga, hbga, lfbga, sqfp, tfbga not suitable suitable hbcc, hlqfp, hsqfp, hsop, htqfp, htssop, hvqfn, sms not suitable [2] suitable plcc [3] , so, soj suitable suitable lqfp, qfp, tqfp not recommended [3] [4] suitable ssop, tssop, vso not recommended [5] suitable
philips semiconductors sa5211 transimpedance ampli?er (180 mhz) product speci?cation rev. 03 07 october 1998 25 of 28 9397 750 07427 ? philips electronics n.v. 2001. all rights reserved. 18. revision history table 7: revision history rev date cpcn description 03 19981007 853-1799 20142 product speci?cation; third version; supersedes second version sa5211_2 of 1998 oct 07 (9397 750 04624). modi?cations: the format of this speci?cation has been redesigned to comply with philips semiconductors new presentation and information standard. 02 19981007 853-1799 20142 product speci?cation; second version; supersedes ?rst version sa5211_1 of 1995 apr 26. modi?cations: changed pre?x from ne to sa. 01 19950426 853-1799 15170 product speci?cation; initial version.
philips semiconductors sa5211 transimpedance ampli?er (180 mhz) product speci?cation rev. 03 07 october 1998 26 of 28 9397 750 07427 ? philips electronics n.v. 2001 all rights reserved. 19. data sheet status [1] please consult the most recently issued data sheet before initiating or completing a design. [2] the product status of the device(s) described in this data sheet may have changed since this data sheet was published. the latest information is ava ilable on the internet at url http://www.semiconductors.philips.com. 20. de?nitions short-form speci?cation the data in a short-form speci?cation is extracted from a full data sheet with the same type number and title. for detailed information see the relevant data sheet or data handbook. limiting values de?nition limiting values given are in accordance with the absolute maximum rating system (iec 60134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information applications that are described herein for any of these products are for illustrative purposes only. philips semiconductors make no representation or warranty that such applications will be suitable for the speci?ed use without further testing or modi?cation. 21. disclaimers life support these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips semiconductors for any damages resulting from such application. right to make changes philips semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. philips semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise speci?ed. data sheet status [1] product status [2] de?nition objective data development this data sheet contains data from the objective speci?cation for product development. philips semiconductors reserves the right to change the speci?cation in any manner without notice. preliminary data quali?cation this data sheet contains data from the preliminary speci?cation. supplementary data will be publish ed at a later date. philips semiconductors reserves the right to change the speci?cation without notice, in order to improve the design and supply the best possible product. product data production this data sheet contains data from the product speci?cation. philips semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. changes will be communicated according to the customer product/process change noti?cation (cpcn) procedure snw-sq-650a.
philips semiconductors sa5211 transimpedance ampli?er (180 mhz) product speci?cation rev. 03 07 october 1998 27 of 28 9397 750 07427 ? philips electronics n.v. 2001. all rights reserved. philips semiconductors - a worldwide company argentina: see south america australia: tel. +61 2 9704 8141, fax. +61 2 9704 8139 austria: tel. +43 160 101, fax. +43 160 101 1210 belarus: tel. +375 17 220 0733, fax. +375 17 220 0773 belgium: see the netherlands brazil: see south america bulgaria: tel. +359 268 9211, fax. +359 268 9102 canada: tel. +1 800 234 7381 china/hong kong: tel. +852 2 319 7888, fax. +852 2 319 7700 colombia: see south america czech republic: see austria denmark: tel. +45 3 288 2636, fax. +45 3 157 0044 finland: tel. +358 961 5800, fax. +358 96 158 0920 france: tel. +33 1 4728 6600, fax. +33 1 4728 6638 germany: tel. +49 40 23 5360, fax. +49 402 353 6300 hungary: tel. +36 1 382 1700, fax. +36 1 382 1800 india: tel. +91 22 493 8541, fax. +91 22 493 8722 indonesia: see singapore ireland: tel. +353 17 64 0000, fax. +353 17 64 0200 israel: tel. +972 36 45 0444, fax. +972 36 49 1007 italy: tel. +39 039 203 6838, fax +39 039 203 6800 japan: tel. +81 33 740 5130, fax. +81 3 3740 5057 korea: tel. +82 27 09 1412, fax. +82 27 09 1415 malaysia: tel. +60 37 50 5214, fax. +60 37 57 4880 mexico: tel. +9-5 800 234 7381 middle east: see italy netherlands: tel. +31 40 278 2785, fax. +31 40 278 8399 new zealand: tel. +64 98 49 4160, fax. +64 98 49 7811 norway: tel. +47 22 74 8000, fax. +47 22 74 8341 philippines: tel. +63 28 16 6380, fax. +63 28 17 3474 poland: tel. +48 22 5710 000, fax. +48 22 5710 001 portugal: see spain romania: see italy russia: tel. +7 095 755 6918, fax. +7 095 755 6919 singapore: tel. +65 350 2538, fax. +65 251 6500 slovakia: see austria slovenia: see italy south africa: tel. +27 11 471 5401, fax. +27 11 471 5398 south america: tel. +55 11 821 2333, fax. +55 11 829 1849 spain: tel. +34 33 01 6312, fax. +34 33 01 4107 sweden: tel. +46 86 32 2000, fax. +46 86 32 2745 switzerland: tel. +41 14 88 2686, fax. +41 14 81 7730 taiwan: tel. +886 22 134 2451, fax. +886 22 134 2874 thailand: tel. +66 23 61 7910, fax. +66 23 98 3447 turkey: tel. +90 216 522 1500, fax. +90 216 522 1813 ukraine: tel. +380 44 264 2776, fax. +380 44 268 0461 united kingdom: tel. +44 208 730 5000, fax. +44 208 754 8421 united states: tel. +1 800 234 7381 uruguay: see south america vietnam: see singapore yugoslavia: tel. +381 11 3341 299, fax. +381 11 3342 553 for all other countries apply to: philips semiconductors, marketing communications, building be, p.o. box 218, 5600 md eindhoven, the netherlands, fax. +31 40 272 4825 internet: http://www.semiconductors.philips.com (sca72)
? philips electronics n.v. 2001. printed in the u.s.a all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. date of release: 07 october 1998 document order number: 9397 750 07427 contents philips semiconductors sa5211 transimpedance ampli?er (180 mhz) 1 description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 4 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 4.1 pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 ordering information . . . . . . . . . . . . . . . . . . . . . 2 6 limiting values . . . . . . . . . . . . . . . . . . . . . . . . . . 2 7 static characteristics . . . . . . . . . . . . . . . . . . . . . 3 8 dynamic characteristics . . . . . . . . . . . . . . . . . . 3 9 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 10 typical performance characteristics . . . . . . . 10 11 theory of operation . . . . . . . . . . . . . . . . . . . . 13 12 bandwidth calculations . . . . . . . . . . . . . . . . . 14 13 noise . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 14 dynamic range calculations . . . . . . . . . . . . . 15 15 application information . . . . . . . . . . . . . . . . . . 18 15.1 die sales disclaimer . . . . . . . . . . . . . . . . . . . . 20 16 package outline . . . . . . . . . . . . . . . . . . . . . . . . 22 17 soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 17.1 introduction to soldering surface mount packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 17.2 reflow soldering . . . . . . . . . . . . . . . . . . . . . . . 23 17.3 wave soldering . . . . . . . . . . . . . . . . . . . . . . . . 23 17.4 manual soldering . . . . . . . . . . . . . . . . . . . . . . 24 17.5 package related soldering information . . . . . . 24 18 revision history . . . . . . . . . . . . . . . . . . . . . . . . 25 19 data sheet status . . . . . . . . . . . . . . . . . . . . . . . 26 20 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 21 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26

▲Up To Search▲

Price & Availability of SA5211D602

	To Download SA5211D602 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .